IRFR3411TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFR3411TRPBF
Datasheet:
Description:
MOSFETs DPAK SMD/SMT N-Channel number of channels:1 130 W 100 V Continuous Drain Current (ID):32 A 71 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 44 MΩ |
| Height | 2.26 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 32 A |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 130 W |
| Power Dissipation | 130 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.96 nF |
| Continuous Drain Current (ID) | 32 A |
| Rds On Max | 44 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 39 ns |
| Element Configuration | Single |
| Rise Time | 35 ns |
| Gate Charge | 71 nC |
| Drain to Source Resistance | 44 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 170 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 44 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 2000 |
| Gate to Source Threshold Voltage | 4 V |
Stock: 59
Distributors
pcbx
pcbxUnit Price$1.01760
Ext.Price$1.01760
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.01760 | $1.01760 |
| 10 | $0.84826 | $8.48260 |
| 25 | $0.77961 | $19.49025 |
| 50 | $0.71651 | $35.82550 |
| 100 | $0.65853 | $65.85300 |
| 300 | $0.63442 | $190.32600 |
| 500 | $0.61120 | $305.60000 |
| 1000 | $0.58976 | $589.76000 |