


| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 55 V |
| Length | 10.3886 mm |
| Width | 6.73 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 11 MΩ |
| Height | 2.3876 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 62 A |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 91 W |
| Power Dissipation | 91 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 1.72 nF |
| Continuous Drain Current (ID) | 42 A |
| Rds On Max | 11 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Rise Time | 61 ns |
| Dual Supply Voltage | 55 V |
| Gate Charge | 40 nC |
| Drain to Source Resistance | 11 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 40 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| On-State Resistance | 11 mΩ |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | 4 V |
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