IRFR9N20DTRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRFR9N20DTRPBF
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 86 W 200 V Continuous Drain Current (ID):9.4 A 18 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 380 mΩ |
| Height | 2.3876 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 9.4 A |
| Lifecycle Status | NRND (Last Updated: 7 months ago) |
| Max Power Dissipation | 86 W |
| Power Dissipation | 86 W |
| Threshold Voltage | 5.5 V |
| Number of Channels | 1 |
| Input capacitance | 560 pF |
| Continuous Drain Current (ID) | 9.4 A |
| Rds On Max | 380 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 7.5 ns |
| Turn-Off Delay Time | 13 ns |
| Element Configuration | Single |
| Fall Time | 9.3 ns |
| Rise Time | 16 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 380 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 5.5 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| On-State Resistance | 380 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 2000 |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||