IRFSL3607PBF
Manufacturer:
Infineon
Mfr.Part #:
IRFSL3607PBF
Datasheet:
Description:
MOSFETs TO-262 Through Hole N-Channel number of channels:1 140 W 75 V Continuous Drain Current (ID):80 A 56 nC
| Parameter | Value |
|---|---|
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 9.65 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Obsolete (Last Updated: 7 months ago) |
| Max Power Dissipation | 140 W |
| Power Dissipation | 140 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 3.07 nF |
| Continuous Drain Current (ID) | 80 A |
| Rds On Max | 9 mΩ |
| Drain to Source Voltage (Vdss) | 75 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 43 ns |
| Fall Time | 96 ns |
| Rise Time | 110 ns |
| Dual Supply Voltage | 75 V |
| Gate Charge | 56 nC |
| Drain to Source Resistance | 9 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Recovery Time | 50 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 75 V |
| On-State Resistance | 9 mΩ |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | N-Channel |
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