


| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 55 V |
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 17.5 MΩ |
| Height | 8.77 mm |
| Packaging | Bulk |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lead Pitch | 2.54 mm |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 49 A |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 94 W |
| Power Dissipation | 83 W |
| Threshold Voltage | 2.1 V |
| Number of Channels | 1 |
| Input capacitance | 1.47 nF |
| Continuous Drain Current (ID) | 41 A |
| Rds On Max | 17.5 mΩ |
| Drain to Source Voltage (Vdss) | 55 V |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 44 ns |
| Element Configuration | Single |
| Rise Time | 60 ns |
| Dual Supply Voltage | 55 V |
| Gate Charge | 42 nC |
| Drain to Source Resistance | 17.5 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 2.1 V |
| Recovery Time | 95 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 55 V |
| On-State Resistance | 17.5 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 63620
Distributors
pcbx
Unit Price$0.26093
Ext.Price$0.26093
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.26093 | $0.26093 |
| 10 | $0.21982 | $2.19820 |
| 50 | $0.18518 | $9.25900 |
| 100 | $0.15727 | $15.72700 |
| 500 | $0.13357 | $66.78500 |
| 1000 | $0.13022 | $130.22000 |
| 3000 | $0.12695 | $380.85000 |
| 5000 | $0.12377 | $618.85000 |
