IRL7833PBF
Manufacturer:
Infineon
Mfr.Part #:
IRL7833PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 140 W 30 V Continuous Drain Current (ID):150 A 32 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 3.8 MΩ |
| Height | 8.763 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 150 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 140 W |
| Power Dissipation | 140 W |
| Threshold Voltage | 2.3 V |
| Number of Channels | 1 |
| Input capacitance | 4.17 nF |
| Continuous Drain Current (ID) | 150 A |
| Rds On Max | 3.8 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 21 ns |
| Element Configuration | Single |
| Fall Time | 6.9 ns |
| Rise Time | 50 ns |
| Gate Charge | 32 nC |
| Drain to Source Resistance | 4.5 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 2.3 V |
| Recovery Time | 63 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 3.8 mΩ |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
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