IRLB3813PBF
Manufacturer:
Infineon
Mfr.Part #:
IRLB3813PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 230 W 30 V Continuous Drain Current (ID):260 A 86 nC
| Parameter | Value |
|---|---|
| Length | 10.668 mm |
| Width | 4.826 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.95 MΩ |
| Height | 9.02 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 230 W |
| Power Dissipation | 230 W |
| Threshold Voltage | 1.9 V |
| Number of Channels | 1 |
| Input capacitance | 8.42 nF |
| Continuous Drain Current (ID) | 260 A |
| Rds On Max | 1.95 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 36 ns |
| Turn-Off Delay Time | 33 ns |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Rise Time | 170 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 86 nC |
| Drain to Source Resistance | 2 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 1.9 V |
| Recovery Time | 36 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 1.95 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.9 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 59
Distributors
pcbx
pcbxUnit Price$0.92160
Ext.Price$0.92160
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.92160 | $0.92160 |
| 10 | $0.74755 | $7.47550 |
| 25 | $0.68675 | $17.16875 |
| 50 | $0.63090 | $31.54500 |
| 100 | $0.57958 | $57.95800 |
| 300 | $0.55297 | $165.89100 |
| 500 | $0.52758 | $263.79000 |
| 1000 | $0.50159 | $501.59000 |