IRLB4030PBF
Manufacturer:
Infineon
Mfr.Part #:
IRLB4030PBF
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 370 W 100 V Continuous Drain Current (ID):180 A 130 nC
| Parameter | Value |
|---|---|
| Length | 10.5156 mm |
| Width | 4.69 mm |
| Termination | Through Hole |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 4.3 MΩ |
| Height | 15.24 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 370 W |
| Power Dissipation | 370 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 11.36 nF |
| Continuous Drain Current (ID) | 180 A |
| Rds On Max | 4.3 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 74 ns |
| Turn-Off Delay Time | 110 ns |
| Element Configuration | Single |
| Fall Time | 170 ns |
| Rise Time | 330 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 130 nC |
| Drain to Source Resistance | 4.3 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 2.5 V |
| Gate to Source Voltage (Vgs) | 16 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| On-State Resistance | 4.3 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | 1.8 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 6
Distributors
pcbx
pcbxUnit Price$2.80483
Ext.Price$2.80483
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.80483 | $2.80483 |
| 10 | $2.37101 | $23.71010 |
| 25 | $2.15026 | $53.75650 |
| 50 | $1.95007 | $97.50350 |
| 100 | $1.76850 | $176.85000 |
| 300 | $1.70384 | $511.15200 |
| 500 | $1.64153 | $820.76500 |
| 1000 | $1.58556 | $1585.56000 |