

| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 37 MΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Manufacturer Package Identifier | Micro3 |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 10 months ago) |
| Max Power Dissipation | 1.3 W |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 800 mV |
| Number of Channels | 1 |
| Input capacitance | 650 pF |
| Continuous Drain Current (ID) | 5 A |
| Rds On Max | 29 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 4.2 ns |
| Turn-Off Delay Time | 22 ns |
| Element Configuration | Single |
| Rise Time | 5.6 ns |
| Gate Charge | 6.8 nC |
| Drain to Source Resistance | 22 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 800 mV |
| Recovery Time | 15 ns |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 29 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | 800 mV |
| FET Type(Transistor Polarity) | N-Channel |
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