IRLMS6702TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRLMS6702TRPBF
Datasheet:
Description:
MOSFETs SOT-23-6 SMD/SMT P-Channel number of channels:1 1.7 W -20 V Continuous Drain Current (ID):-2.4 A 5.8 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 2.9972 mm |
| Width | 1.75 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 200 mΩ |
| Height | 1.45 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -2.3 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 1.7 W |
| Power Dissipation | 1.7 W |
| Threshold Voltage | -700 mV |
| Number of Channels | 1 |
| Input capacitance | 210 pF |
| Continuous Drain Current (ID) | -2.4 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 13 ns |
| Turn-Off Delay Time | 21 ns |
| Element Configuration | Single |
| Fall Time | 18 ns |
| Rise Time | 20 ns |
| Gate Charge | 5.8 nC |
| Drain to Source Resistance | 200 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| On-State Resistance | 200 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3000 |
| Gate to Source Threshold Voltage | 4 V |
| FET Type(Transistor Polarity) | P-Channel |
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