IRLR3636TRPBF
Manufacturer:
Infineon
Mfr.Part #:
IRLR3636TRPBF
Datasheet:
Description:
MOSFETs DPAK-3 SMD/SMT N-Channel number of channels:1 143 W 60 V Continuous Drain Current (ID):99 A 49 nC
| Parameter | Value |
|---|---|
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 2.2606 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 60 V |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current | 50 A |
| Lifecycle Status | Production (Last Updated: 7 months ago) |
| Max Power Dissipation | 143 W |
| Power Dissipation | 143 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 3.779 nF |
| Continuous Drain Current (ID) | 99 A |
| Rds On Max | 6.8 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 45 ns |
| Turn-Off Delay Time | 43 ns |
| Element Configuration | Single |
| Fall Time | 69 ns |
| Rise Time | 216 ns |
| Gate Charge | 49 nC |
| Drain to Source Resistance | 6.6 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Gate to Source Voltage (Vgs) | 16 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| On-State Resistance | 6.8 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 2000 |
| Gate to Source Threshold Voltage | 2.5 V |
Stock: 805
Distributors
pcbx
pcbxUnit Price$0.82570
Ext.Price$0.82570
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.82570 | $0.82570 |
| 10 | $0.67114 | $6.71140 |
| 25 | $0.61723 | $15.43075 |
| 50 | $0.56765 | $28.38250 |
| 100 | $0.52205 | $52.20500 |
| 300 | $0.49853 | $149.55900 |
| 500 | $0.47608 | $238.04000 |
| 1000 | $0.45318 | $453.18000 |