


| Parameter | Value |
|---|---|
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 5.8 MΩ |
| Height | 2.3876 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Lifecycle Status | Obsolete (Last Updated: 7 months ago) |
| Max Power Dissipation | 75 W |
| Power Dissipation | 75 W |
| Threshold Voltage | 1.8 V |
| Number of Channels | 1 |
| Input capacitance | 2.15 nF |
| Continuous Drain Current (ID) | 86 A |
| Rds On Max | 5.8 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 12 ns |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Fall Time | 16 ns |
| Rise Time | 49 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 15 nC |
| Drain to Source Resistance | 8 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 1.8 V |
| Recovery Time | 36 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| On-State Resistance | 5.8 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 3000 |
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