


| Parameter | Value |
|---|---|
| Length | 10.668 mm |
| Width | 9.65 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.7 MΩ |
| Height | 4.572 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Lifecycle Status | Obsolete (Last Updated: 10 months ago) |
| Max Power Dissipation | 375 W |
| Power Dissipation | 375 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 10.315 nF |
| Continuous Drain Current (ID) | 343 A |
| Rds On Max | 1.7 mΩ |
| Drain to Source Voltage (Vdss) | 40 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 65 ns |
| Turn-Off Delay Time | 97 ns |
| Element Configuration | Single |
| Rise Time | 827 ns |
| Gate Charge | 108 nC |
| Drain to Source Resistance | 1.7 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| On-State Resistance | 1.7 mΩ |
| Schedule B | 8541290080 |
| Package Quantity | 1000 |
| Gate to Source Threshold Voltage | -20 V, 20 V |
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