

| Parameter | Value |
|---|---|
| Length | 10.41 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 9.01 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 60 W |
| Power Dissipation | 60 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 870 pF |
| Continuous Drain Current (ID) | 17 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 23 ns |
| Element Configuration | Single |
| Fall Time | 41 ns |
| Rise Time | 110 ns |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 100 mΩ |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | 10 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 2 V |
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