IXTQ82N25P
Manufacturer:
IXYS
Mfr.Part #:
IXTQ82N25P
Datasheet:
Description:
MOSFETs TO-3P-3 Through Hole N-Channel number of channels:1 500 W 250 V Continuous Drain Current (ID):82 A 142 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Tube |
| RoHS | Compliant |
| Output Current | 1.4 A |
| Max Power Dissipation | 500 W |
| Power Dissipation | 500 W |
| Number of Channels | 1 |
| Input capacitance | 4.8 nF |
| Continuous Drain Current (ID) | 82 A |
| Rds On Max | 35 mΩ |
| Drain to Source Voltage (Vdss) | 250 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-Off Delay Time | 78 ns |
| Element Configuration | Single |
| Fall Time | 22 ns |
| Rise Time | 20 ns |
| Gate Charge | 142 nC |
| Drain to Source Resistance | 35 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 250 V |
| Gate to Source Threshold Voltage | 5 V |
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