JCS7HN65BC-262
Manufacturer:
Sino-Microelectronics
Mfr.Part #:
JCS7HN65BC-262
Datasheet:
Description:
MOSFETs TO-262 Through Hole N-Channel number of channels:1 120 W 650 V Continuous Drain Current (ID):7 A 32 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 120 W |
| Number of Channels | 1 |
| Input capacitance | 1.1 nF |
| Continuous Drain Current (ID) | 7 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 32 nC |
| Drain to Source Resistance | 1.05 Ω |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 2 V to 4 V |
Stock: 2
Distributors
pcbx
pcbxUnit Price$0.40416
Ext.Price$0.40416
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.40416 | $0.40416 |
| 10 | $0.32016 | $3.20160 |
| 25 | $0.30229 | $7.55725 |
| 50 | $0.28541 | $14.27050 |
| 100 | $0.24299 | $24.29900 |
| 300 | $0.23253 | $69.75900 |
| 500 | $0.22252 | $111.26000 |
| 1000 | $0.20933 | $209.33000 |