MMBT5551G-B-AE3-R
Manufacturer:
UTC
Mfr.Part #:
MMBT5551G-B-AE3-R
Datasheet:
Description:
BJTs SOT-23 SMD/SMT NPN 350 mW Collector Base Voltage (VCBO):180 V Collector Emitter Voltage (VCEO):160 V Emitter Base Voltage (VEBO):6 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Polarity | |
| Max Power Dissipation | |
| Power Dissipation | 350 mW |
| Max Collector Current | 600 mA |
| Collector Emitter Breakdown Voltage | |
| Transition Frequency | |
| Collector Emitter Voltage (VCEO) | 160 V |
| Gain Bandwidth Product | 300 MHz |
| Collector Base Voltage (VCBO) | 180 V |
| Collector Emitter Saturation Voltage | 150 mV |
| Emitter Base Voltage (VEBO) | 6 V |
| Max Cutoff Collector Current | 50 nA |
| Transistor Type | NPN |
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