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PDTD113ET,215

Manufacturer:

Nxp Semiconductors

Mfr.Part #:

PDTD113ET,215

Datasheet:
Description:

BJTs SOT-23 SMD/SMT NPN 250 mW Collector Emitter Voltage (VCEO):50 V Emitter Base Voltage (VEBO):10 V

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-65 °C
Number of Pins3
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
PolarityNPN
REACH SVHCNo SVHC
Lifecycle StatusProduction (Last Updated: 23 hours ago)
Max Power Dissipation250 mW
Power Dissipation250 mW
Max Collector Current500 mA
Collector Emitter Breakdown Voltage50 V
Element ConfigurationSingle
Collector Emitter Voltage (VCEO)50 V
Max Breakdown Voltage50 V
Emitter Base Voltage (VEBO)10 V
hFE Min33
Schedule B8541210080
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 23 hours ago)
Max Cutoff Collector Current500 nA
Transistor TypeNPN

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