PMCPB5530X,115
Manufacturer:
Nexperia
Mfr.Part #:
PMCPB5530X,115
Datasheet:
Description:
MOSFETs DFN2020-6 SMD/SMT N-Channel, P-Channel number of channels:2 490 mW 20 V Continuous Drain Current (ID):3.4 A 14.4 nC, 8.1 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Height | 650 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 1 day ago) |
| Max Power Dissipation | 490 mW |
| Power Dissipation | 490 mW |
| Ambient Temperature Range High | 150 °C |
| Number of Channels | 2 |
| Input capacitance | 660 pF |
| Continuous Drain Current (ID) | 3.4 A |
| Rds On Max | 34 mΩ |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
| Turn-On Delay Time | 4 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Dual |
| Rise Time | 15 ns |
| Gate Charge | 14.4 nC, 8.1 nC |
| Drain to Source Resistance | 70 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | -650 mV |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY (Last Updated: 1 day ago) |
| Gate to Source Threshold Voltage | 650 mV |
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