PSMN018-100ESFQ
Manufacturer:
Nexperia
Mfr.Part #:
PSMN018-100ESFQ
Datasheet:
Description:
MOSFETs I2PAK-3 Through Hole N-Channel number of channels:1 111 W 100 V Continuous Drain Current (ID):53 A 21.4 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 111 W |
| Number of Channels | 1 |
| Input capacitance | 1.482 nF |
| Continuous Drain Current (ID) | 53 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 21.4 nC |
| Drain to Source Resistance | 18 mΩ |
| Gate to Source Voltage (Vgs) | -20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Gate to Source Threshold Voltage | 2 V |
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