PSMN4R8-100BSEJ
Manufacturer:
Nexperia
Mfr.Part #:
PSMN4R8-100BSEJ
Datasheet:
Description:
MOSFETs D2PAK SMD/SMT N-Channel number of channels:1 405 W 100 V Continuous Drain Current (ID):120 A 196 nC
| Parameter | Value |
|---|---|
| Termination | Wire Wrap |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Material | Brass, Bronze |
| Packaging | Reel |
| RoHS | Compliant |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 10 hours ago) |
| Max Power Dissipation | 406 W |
| Power Dissipation | 405 W |
| Number of Channels | 1 |
| Input capacitance | 14.4 nF |
| Continuous Drain Current (ID) | 120 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 41 ns |
| Turn-Off Delay Time | 127 ns |
| Element Configuration | Single |
| Fall Time | 69 ns |
| Rise Time | 65 ns |
| Wire/Cable Gauge | 18 AWG |
| Wire Gauge (Max) | 24 AWG |
| Wire Gauge (Min) | 20 AWG |
| Plating | Gold, Lead, Tin |
| Gate Charge | 196 nC |
| Drain to Source Resistance | 4.1 mΩ |
| Max Dual Supply Voltage | 100 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY (Last Updated: 10 hours ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | N-Channel |
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