
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Bulk |
| Power Dissipation | 2 W (2000 mW) |
| Continuous Drain Current (ID) | 6 A |
| Drain to Source Resistance | 25 mΩ |
| Gate to Source Voltage (Vgs) | 10 V |
| Drain to Source Breakdown Voltage (Vds) | 10 V |
| FET Type(Transistor Polarity) | N-Channel |
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