SE18NS65A
Manufacturer:
SINO-IC
Mfr.Part #:
SE18NS65A
Datasheet:
Description:
MOSFETs TO-220 Through Hole N-Channel number of channels:1 150 W 650 V Continuous Drain Current (ID):20 A 36.5 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 150 W |
| Number of Channels | 1 |
| Input capacitance | 1.505 nF |
| Continuous Drain Current (ID) | 20 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 36.5 nC |
| Drain to Source Resistance | 190 mΩ |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 650 V |
| Gate to Source Threshold Voltage | 4 V |
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