SI1012CR-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI1012CR-T1-GE3
Datasheet:
Description:
MOSFETs SC-75A-3 SMD/SMT N-Channel number of channels:1 240 mW 20 V Continuous Drain Current (ID):630 mA 1.3 nC
| Parameter | Value |
|---|---|
| Length | 1.68 mm |
| Width | 860 µm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 396 mΩ |
| Height | 800 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 2.012816 mg |
| Number of Elements | 1 |
| Max Power Dissipation | 240 mW |
| Power Dissipation | 240 mW |
| Threshold Voltage | 400 mV |
| Number of Channels | 1 |
| Input capacitance | 43 pF |
| Continuous Drain Current (ID) | 630 mA |
| Rds On Max | 396 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 26 ns |
| Element Configuration | Single |
| Rise Time | 16 ns |
| Gate Charge | 1.3 nC |
| Drain to Source Resistance | 330 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 400 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 83750
Distributors
pcbx
pcbxUnit Price$0.18809
Ext.Price$0.18809
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.18809 | $0.18809 |
| 10 | $0.12482 | $1.24820 |
| 50 | $0.10735 | $5.36750 |
| 100 | $0.09233 | $9.23300 |
| 500 | $0.07575 | $37.87500 |
| 1000 | $0.07506 | $75.06000 |
| 3000 | $0.04942 | $148.26000 |
| 5000 | $0.04318 | $215.90000 |