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SI1012R-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI1012R-T1-GE3

Datasheet:
Description:

MOSFETs SOT-416 SMD/SMT N-Channel number of channels:1 150 mW 20 V Continuous Drain Current (ID):600 mA 750 pC

ParameterValue
Length1.58 mm
Width760 µm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance700 MΩ
Height800 µm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation150 mW
Power Dissipation150 mW
Threshold Voltage800 mV
Number of Channels1
Continuous Drain Current (ID)600 mA
Rds On Max700 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time5 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Fall Time5 ns
Rise Time5 ns
Gate Charge750 pC
Drain to Source Resistance410 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)6 V
Drain to Source Breakdown Voltage (Vds)20 V
Gate to Source Threshold Voltage450 mV
FET Type(Transistor Polarity)N-Channel

Stock: 1

Distributors
pcbx
Unit Price$0.47534
Ext.Price$0.47534
QtyUnit PriceExt.Price
1$0.47534$0.47534
10$0.29580$2.95800
50$0.23800$11.90000
100$0.19150$19.15000
500$0.14620$73.10000
1000$0.13080$130.80000
3000$0.12054$361.62000
5000$0.11120$556.00000
10000$0.10259$1025.90000