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SI1012X-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI1012X-T1-GE3

Datasheet:
Description:

MOSFETs SC-89-3 SMD/SMT N-Channel number of channels:1 250 mW 20 V Continuous Drain Current (ID):500 mA 750 pC

ParameterValue
Length1.7 mm
Width950 µm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance700 mΩ
Height800 µm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation250 mW
Power Dissipation250 mW
Threshold Voltage900 mV
Number of Channels1
Continuous Drain Current (ID)500 mA
Rds On Max700 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time5 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Fall Time5 ns
Rise Time5 ns
Gate Charge750 pC
Drain to Source Resistance700 mΩ
Gate to Source Voltage (Vgs)6 V
Drain to Source Breakdown Voltage (Vds)20 V
Schedule B8541210080
Gate to Source Threshold Voltage450 mV
FET Type(Transistor Polarity)N-Channel

Stock: 96

Distributors
pcbx
Unit Price$0.36326
Ext.Price$0.36326
QtyUnit PriceExt.Price
1$0.36326$0.36326
10$0.28454$2.84540
50$0.24597$12.29850
100$0.21262$21.26200
500$0.18352$91.76000
1000$0.17285$172.85000