SI1013R-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI1013R-T1-GE3
Datasheet:
Description:
MOSFETs SOT-416 SMD/SMT P-Channel number of channels:1 150 mW -20 V Continuous Drain Current (ID):-400 mA 1.65 nC
| Parameter | Value |
|---|---|
| Length | 1.58 mm |
| Width | 760 µm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 1.2 Ω |
| Height | 700 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Max Power Dissipation | 150 mW |
| Power Dissipation | 150 mW |
| Threshold Voltage | -450 mV |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | -400 mA |
| Rds On Max | 1.2 Ω |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 5 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Rise Time | 9 ns |
| Gate Charge | 1.65 nC |
| Drain to Source Resistance | 1.2 Ω |
| Gate to Source Voltage (Vgs) | 6 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Gate to Source Threshold Voltage | 450 mV |
| FET Type(Transistor Polarity) | P-Channel |
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