SI1016X-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI1016X-T1-GE3
Datasheet:
Description:
MOSFETs SOT-563 SMD/SMT N-Channel, P-Channel number of channels:2 250 mW 20 V Continuous Drain Current (ID):370 mA 750 pC, 1.5 nC
| Parameter | Value |
|---|---|
| Length | 1.7 mm |
| Width | 1.2 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 700 mΩ |
| Height | 600 µm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Weight | 32.006612 mg |
| Number of Elements | 2 |
| Max Power Dissipation | 250 mW |
| Power Dissipation | 250 mW |
| Number of Channels | 2 |
| Continuous Drain Current (ID) | 370 mA |
| Rds On Max | 700 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge | 750 pC, 1.5 nC |
| Drain to Source Resistance | 800 mΩ |
| Gate to Source Voltage (Vgs) | 6 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel, P-Channel |
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