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SI1021R-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI1021R-T1-GE3

Datasheet:
Description:

MOSFETs SOT-416 SMD/SMT P-Channel number of channels:1 250 mW -60 V Continuous Drain Current (ID):190 mA 1.7 nC

ParameterValue
Length1.58 mm
Width760 µm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance4 Ω
Height700 µm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation250 mW
Power Dissipation250 mW
Threshold Voltage-2 V
Number of Channels1
Input capacitance23 pF
Continuous Drain Current (ID)190 mA
Rds On Max4 Ω
Drain to Source Voltage (Vdss)60 V
FET Type(Transistor Polarity)P-Channel
Turn-On Delay Time20 ns
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Gate Charge1.7 nC
Drain to Source Resistance8 Ω
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-60 V
Schedule B8541210080
Gate to Source Threshold Voltage3 V

Stock: 343

Distributors
pcbx
Unit Price$0.32707
Ext.Price$0.32707
QtyUnit PriceExt.Price
1$0.32707$0.32707
10$0.28797$2.87970
50$0.25354$12.67700
100$0.21639$21.63900
500$0.18469$92.34500
1000$0.17655$176.55000
3000$0.16876$506.28000
5000$0.15798$789.90000