SI1026X-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI1026X-T1-GE3
Datasheet:
Description:
MOSFETs SC-89-6 SMD/SMT N-Channel number of channels:2 250 mW 60 V Continuous Drain Current (ID):305 mA 600 pC
| Parameter | Value |
|---|---|
| Length | 1.7 mm |
| Width | 1.2 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 3 Ω |
| Height | 600 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 2 |
| Max Power Dissipation | 250 mW |
| Power Dissipation | 250 mW |
| Threshold Voltage | 2.5 V |
| Number of Channels | 2 |
| Input capacitance | 30 pF |
| Continuous Drain Current (ID) | 305 mA |
| Rds On Max | 1.4 Ω |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Element Configuration | Dual |
| Gate Charge | 600 pC |
| Drain to Source Resistance | 1.4 Ω |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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