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SI1965DH-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI1965DH-T1-GE3

Datasheet:
Description:

MOSFETs SC-70-6 SMD/SMT P-Channel number of channels:2 740 mW -12 V Continuous Drain Current (ID):1.14 A 4.2 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
Resistance390 mΩ
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Weight28.009329 mg
Number of Elements2
Max Power Dissipation1.25 W
Power Dissipation740 mW
Number of Channels2
Input capacitance120 pF
Continuous Drain Current (ID)1.14 A
Rds On Max390 mΩ
Drain to Source Voltage (Vdss)12 V
Turn-On Delay Time12 ns
Turn-Off Delay Time15 ns
Element ConfigurationDual
Rise Time27 ns
Gate Charge4.2 nC
Drain to Source Resistance390 mΩ
Nominal Vgs-400 mV
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-12 V
Schedule B8541210080
Gate to Source Threshold Voltage2.5 V
FET Type(Transistor Polarity)P-Channel

Stock: 3806

Distributors
pcbx
Unit Price$0.37531
Ext.Price$0.37531
QtyUnit PriceExt.Price
1$0.37531$0.37531
10$0.27700$2.77000
50$0.23032$11.51600
100$0.19150$19.15000
500$0.14620$73.10000
1000$0.13423$134.23000
3000$0.11883$356.49000
5000$0.08635$431.75000