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SI1967DH-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI1967DH-T1-GE3

Datasheet:
Description:

MOSFETs SC-70-6 SMD/SMT P-Channel number of channels:2 740 mW -20 V Continuous Drain Current (ID):-1 A 4 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins6
Resistance490 MΩ
Height1.1 mm
PackagingReel
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Weight28.009329 mg
Number of Elements2
Max Power Dissipation1.25 W
Power Dissipation740 mW
Threshold Voltage-1 V
Number of Channels2
Input capacitance110 pF
Continuous Drain Current (ID)-1 A
Rds On Max490 mΩ
Drain to Source Voltage (Vdss)-20 V
Turn-On Delay Time2 ns
Turn-Off Delay Time12 ns
Element ConfigurationDual
Rise Time27 ns
Gate Charge4 nC
Drain to Source Resistance390 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541210080
Gate to Source Threshold Voltage2.5 V
FET Type(Transistor Polarity)P-Channel

Stock: 522

Distributors
pcbx
Unit Price$0.32986
Ext.Price$0.32986
QtyUnit PriceExt.Price
1$0.32986$0.32986
10$0.29044$2.90440
50$0.25574$12.78700
100$0.21824$21.82400
500$0.18624$93.12000
1000$0.17800$178.00000
3000$0.17013$510.39000
5000$0.15925$796.25000