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SI2300DS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2300DS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.1 W 30 V Continuous Drain Current (ID):3.1 A 3 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance68 MΩ
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Contact PlatingTin
Number of Elements1
Max Power Dissipation1.7 W
Power Dissipation1.1 W
Threshold Voltage600 mV
Number of Channels1
Input capacitance320 pF
Continuous Drain Current (ID)3.1 A
Rds On Max68 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time5 ns
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Fall Time11 ns
Rise Time15 ns
Gate Charge3 nC
Drain to Source Resistance55 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)12 V
Drain to Source Breakdown Voltage (Vds)30 V
Gate to Source Threshold Voltage1.5 V
FET Type(Transistor Polarity)N-Channel

Stock: 33336

Distributors
pcbx
Unit Price$0.21287
Ext.Price$0.21287
QtyUnit PriceExt.Price
1$0.21287$0.21287
10$0.12482$1.24820
50$0.12310$6.15500
100$0.12140$12.14000
500$0.11798$58.99000
1000$0.11114$111.14000
3000$0.08806$264.18000
5000$0.07259$362.95000