SI2301BDS-T1-GE3
Manufacturer:
VBsemi
Mfr.Part #:
SI2301BDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 900 mW -20 V Continuous Drain Current (ID):-2.4 A 4.5 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 900 mW |
| Number of Channels | 1 |
| Input capacitance | 375 pF |
| Continuous Drain Current (ID) | -2.4 A |
| Gate Charge | 4.5 nC |
| Drain to Source Resistance | 80 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Gate to Source Threshold Voltage | 450 mV, 950 mV |
| FET Type(Transistor Polarity) | P-Channel |
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