SI2301BDS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2301BDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 700 mW -20 V Continuous Drain Current (ID):-2.2 A 4.5 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 100 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Weight | 1.437803 g |
| Number of Elements | 1 |
| Max Power Dissipation | 700 mW |
| Power Dissipation | 700 mW |
| Threshold Voltage | -950 mV |
| Number of Channels | 1 |
| Input capacitance | 375 pF |
| Continuous Drain Current (ID) | -2.2 A |
| Rds On Max | 100 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 30 ns |
| Element Configuration | Single |
| Rise Time | 40 ns |
| Gate Charge | 4.5 nC |
| Drain to Source Resistance | 100 mΩ |
| Nominal Vgs | -950 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 950 mV |
| FET Type(Transistor Polarity) | P-Channel |
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