0%
Uploading...

SI2304BDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2304BDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 750 mW 30 V Continuous Drain Current (ID):3.2 A 2.6 nC

ParameterValue
Length3.04 mm
Width1.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance70 mΩ
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation750 mW
Power Dissipation750 mW
Threshold Voltage2.25 V
Number of Channels1
Input capacitance225 pF
Continuous Drain Current (ID)3.2 A
Rds On Max70 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time7.5 ns
Turn-Off Delay Time19 ns
Element ConfigurationSingle
Fall Time12.5 ns
Rise Time12.5 ns
Gate Charge2.6 nC
Drain to Source Resistance55 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Gate to Source Threshold Voltage3 V
FET Type(Transistor Polarity)N-Channel

Stock: 254995

Distributors
pcbx
Unit Price$0.56938
Ext.Price$0.56938
QtyUnit PriceExt.Price
1$0.56938$0.56938
10$0.35394$3.53940
50$0.28530$14.26500
100$0.22997$22.99700
500$0.17611$88.05500
1000$0.16244$162.44000
3000$0.16244$487.32000
5000$0.13743$687.15000
10000$0.11627$1162.70000