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SI2304DDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2304DDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.1 W 30 V Continuous Drain Current (ID):3.6 A 6.7 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance60 mΩ
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Contact PlatingTin
Number of Elements1
Max Power Dissipation200 mW
Power Dissipation1.1 W
Threshold Voltage2.2 V
Number of Channels1
Input capacitance35 pF
Continuous Drain Current (ID)3.6 A
Rds On Max850 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time12 ns
Turn-Off Delay Time12 ns
Element ConfigurationSingle
Fall Time22 ns
Rise Time50 ns
Gate Charge6.7 nC
Drain to Source Resistance49 mΩ
Nominal Vgs2.2 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1.2 V
FET Type(Transistor Polarity)N-Channel

Stock: 11640

Distributors
pcbx
Unit Price$0.07709
Ext.Price$0.07709
QtyUnit PriceExt.Price
1$0.07709$0.07709
10$0.06915$0.69150
50$0.06202$3.10100
100$0.05528$5.52800
500$0.04928$24.64000
1000$0.04471$44.71000
3000$0.04057$121.71000
5000$0.03822$191.10000