SI2305CDS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2305CDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 960 mW -8 V Continuous Drain Current (ID):-4.4 A 12 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 35 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 8 V |
| REACH SVHC | No SVHC |
| Weight | 1.437803 g |
| Number of Elements | 1 |
| Current | 58 A |
| Max Power Dissipation | 960 mW |
| Power Dissipation | 960 mW |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Input capacitance | 715 pF |
| Continuous Drain Current (ID) | -4.4 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | -8 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 40 ns |
| Element Configuration | Single |
| Rise Time | 20 ns |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 28 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -8 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 1085
Distributors
pcbx
pcbxUnit Price$0.07987
Ext.Price$0.07987
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.07987 | $0.07987 |
| 10 | $0.07081 | $0.70810 |
| 50 | $0.06278 | $3.13900 |
| 100 | $0.05507 | $5.50700 |
| 500 | $0.04831 | $24.15500 |
| 1000 | $0.04501 | $45.01000 |
| 3000 | $0.04194 | $125.82000 |
| 5000 | $0.03930 | $196.50000 |