0%
Uploading...

SI2306BDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2306BDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 750 mW 30 V Continuous Drain Current (ID):3.16 A 3 nC

ParameterValue
Length3.04 mm
Width1.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance47 MΩ
Height1.02 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation750 mW
Power Dissipation750 mW
Threshold Voltage3 V
Number of Channels1
Input capacitance305 pF
Continuous Drain Current (ID)3.16 A
Rds On Max47 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time7 ns
Turn-Off Delay Time14 ns
Element ConfigurationSingle
Fall Time12 ns
Rise Time12 ns
Gate Charge3 nC
Drain to Source Resistance47 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage3 V
FET Type(Transistor Polarity)N-Channel

Stock: 2853

Distributors
pcbx
Unit Price$0.21886
Ext.Price$0.21886
QtyUnit PriceExt.Price
1$0.21886$0.21886
10$0.16927$1.69270
50$0.15592$7.79600
100$0.14363$14.36300
500$0.13936$69.68000
1000$0.13166$131.66000
3000$0.11456$343.68000
5000$0.10174$508.70000