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SI2307BDS-T1-E3

Manufacturer:

Vishay

Mfr.Part #:

SI2307BDS-T1-E3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW -30 V Continuous Drain Current (ID):2.5 A 9 nC

ParameterValue
Length3.04 mm
Width1.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance78 mΩ
Height1.02 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Number of Elements1
Max Power Dissipation750 mW
Power Dissipation750 mW
Threshold Voltage-3 V
Number of Channels1
Input capacitance380 pF
Continuous Drain Current (ID)2.5 A
Rds On Max78 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time9 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Fall Time12 ns
Rise Time12 ns
Gate Charge9 nC
Drain to Source Resistance78 mΩ
Nominal Vgs-3 V
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Schedule B8541290080
Gate to Source Threshold Voltage3 V
FET Type(Transistor Polarity)P-Channel

Stock: 41608

Distributors
pcbx
Unit Price$0.58819
Ext.Price$0.58819
QtyUnit PriceExt.Price
1$0.58819$0.58819
10$0.38900$3.89000
25$0.34229$8.55725
50$0.30119$15.05950
100$0.26503$26.50300
300$0.23465$70.39500
500$0.20775$103.87500
1000$0.19321$193.21000
3000$0.15816$474.48000
5000$0.15601$780.05000
10000$0.15389$1538.90000