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SI2307BDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2307BDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW -30 V Continuous Drain Current (ID):2.5 A 9 nC

ParameterValue
Length3.04 mm
Width1.4 mm
TerminationSMD/SMT
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height1.02 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation750 mW
Power Dissipation750 mW
Number of Channels1
Input capacitance380 pF
Continuous Drain Current (ID)2.5 A
Rds On Max78 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time9 ns
Turn-Off Delay Time25 ns
Element ConfigurationSingle
Fall Time12 ns
Rise Time12 ns
Dual Supply Voltage30 V
Gate Charge9 nC
Drain to Source Resistance78 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)-30 V
Gate to Source Threshold Voltage3 V
FET Type(Transistor Polarity)P-Channel

Stock: 32325

Distributors
pcbx
Unit Price$0.59417
Ext.Price$0.59417
QtyUnit PriceExt.Price
1$0.59417$0.59417
10$0.36933$3.69330
25$0.32038$8.00950
50$0.27792$13.89600
100$0.24109$24.10900
300$0.21149$63.44700
500$0.18552$92.76000
1000$0.16757$167.57000
3000$0.14534$436.02000
5000$0.13469$673.45000
10000$0.12482$1248.20000