SI2307CDS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2307CDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 1.1 W -30 V Continuous Drain Current (ID):-2.7 A 4.1 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 88 MΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 1.1 W |
| Power Dissipation | 1.1 W |
| Threshold Voltage | -3 V |
| Number of Channels | 1 |
| Input capacitance | 340 pF |
| Continuous Drain Current (ID) | -2.7 A |
| Rds On Max | 88 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 5.5 ns |
| Turn-Off Delay Time | 17 ns |
| Element Configuration | Single |
| Fall Time | 40 ns |
| Rise Time | 40 ns |
| Gate Charge | 4.1 nC |
| Drain to Source Resistance | 73 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -3 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 3832
Distributors
pcbx
pcbxUnit Price$0.09811
Ext.Price$0.09811
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.09811 | $0.09811 |
| 10 | $0.09248 | $0.92480 |
| 50 | $0.08717 | $4.35850 |
| 100 | $0.08271 | $8.27100 |
| 500 | $0.07847 | $39.23500 |
| 1000 | $0.07348 | $73.48000 |
| 3000 | $0.06880 | $206.40000 |
| 5000 | $0.06713 | $335.65000 |