SI2308BDS-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI2308BDS-T1-E3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.09 W 60 V Continuous Drain Current (ID):1.9 A 6.8 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 156 MΩ |
| Height | 1.12 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 1.14 W |
| Power Dissipation | 1.09 W |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Input capacitance | 190 pF |
| Continuous Drain Current (ID) | 1.9 A |
| Rds On Max | 54 mΩ |
| Drain to Source Voltage (Vdss) | 60 V |
| Turn-On Delay Time | 4 ns |
| Turn-Off Delay Time | 10 ns |
| Element Configuration | Single |
| Fall Time | 16 ns |
| Rise Time | 16 ns |
| Gate Charge | 6.8 nC |
| Drain to Source Resistance | 130 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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