SI2312BDS-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI2312BDS-T1-E3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 750 mW 20 V Continuous Drain Current (ID):3.9 A 12 nC
| Parameter | Value |
|---|---|
| Length | 3.0226 mm |
| Width | 1.397 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 31 mΩ |
| Height | 1.016 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Max Power Dissipation | 750 mW |
| Power Dissipation | 750 mW |
| Threshold Voltage | 850 mV |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 3.9 A |
| Rds On Max | 31 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 30 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 12 nC |
| Drain to Source Resistance | 31 mΩ |
| Nominal Vgs | 450 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 450 mV |
| FET Type(Transistor Polarity) | N-Channel |
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