SI2312BDS-T1-GE3
Manufacturer:
Vishay
Mfr.Part #:
SI2312BDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 750 mW 20 V Continuous Drain Current (ID):5 A 7.5 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 31 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Max Power Dissipation | 750 mW |
| Power Dissipation | 750 mW |
| Threshold Voltage | 8 V |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 5 A |
| Rds On Max | 31 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 30 ns |
| Rise Time | 30 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 7.5 nC |
| Drain to Source Resistance | 31 mΩ |
| Nominal Vgs | 8 V |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | 20 V |
| Gate to Source Threshold Voltage | 850 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 470
Distributors
pcbx
pcbxUnit Price$0.41213
Ext.Price$0.41213
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.41213 | $0.41213 |
| 10 | $0.33331 | $3.33310 |
| 25 | $0.30692 | $7.67300 |
| 50 | $0.28262 | $14.13100 |
| 100 | $0.26025 | $26.02500 |
| 300 | $0.23705 | $71.11500 |
| 500 | $0.21592 | $107.96000 |
| 1000 | $0.20360 | $203.60000 |