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SI2312CDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2312CDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.25 W 20 V Continuous Drain Current (ID):6 A 8.8 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance31.8 MΩ
Height1.12 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCNo SVHC
Number of Elements1
Max Power Dissipation2.1 W
Power Dissipation1.25 W
Threshold Voltage1 V
Number of Channels1
Input capacitance865 pF
Continuous Drain Current (ID)6 A
Rds On Max31.8 mΩ
Drain to Source Voltage (Vdss)20 V
Turn-On Delay Time8 ns
Turn-Off Delay Time31 ns
Element ConfigurationSingle
Fall Time8 ns
Rise Time17 ns
Gate Charge8.8 nC
Drain to Source Resistance26.5 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)8 V
Drain to Source Breakdown Voltage (Vds)20 V
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

Stock: 207

Distributors
pcbx
Unit Price$0.31555
Ext.Price$0.31555
QtyUnit PriceExt.Price
1$0.31555$0.31555
10$0.28140$2.81400
50$0.25094$12.54700
100$0.21876$21.87600
500$0.19070$95.35000
1000$0.17069$170.69000
3000$0.15278$458.34000
5000$0.14328$716.40000