SI2315BDS-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI2315BDS-T1-E3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 750 mW -12 V Continuous Drain Current (ID):-3 A 8 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 50 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 12 V |
| REACH SVHC | No SVHC |
| Weight | 1.437803 g |
| Number of Elements | 1 |
| Current | 3 A |
| Max Power Dissipation | 750 mW |
| Power Dissipation | 750 mW |
| Threshold Voltage | -900 mV |
| Number of Channels | 1 |
| Input capacitance | 715 pF |
| Continuous Drain Current (ID) | -3 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | -12 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Single |
| Rise Time | 35 ns |
| Dual Supply Voltage | -12 V |
| Gate Charge | 8 nC |
| Drain to Source Resistance | 40 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -900 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -12 V |
| Schedule B | 8541290080 |
| Gate to Source Threshold Voltage | 900 mV |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 12
Distributors
pcbx
pcbxUnit Price$0.20496
Ext.Price$0.20496
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.20496 | $0.20496 |
| 10 | $0.16493 | $1.64930 |
| 50 | $0.14510 | $7.25500 |
| 100 | $0.12765 | $12.76500 |
| 500 | $0.11805 | $59.02500 |
| 1000 | $0.11223 | $112.23000 |