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SI2316BDS-T1-GE3

Manufacturer:

Vishay

Mfr.Part #:

SI2316BDS-T1-GE3

Datasheet:
Description:

MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.66 W 30 V Continuous Drain Current (ID):4.5 A 6.35 nC

ParameterValue
Length3.04 mm
Width1.4 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Resistance50 mΩ
Height1.02 mm
PackagingReel
Radiation HardeningNo
RoHSCompliant
REACH SVHCUnknown
Max Power Dissipation1.25 W
Power Dissipation1.66 W
Threshold Voltage3 V
Number of Channels1
Input capacitance350 pF
Continuous Drain Current (ID)4.5 A
Rds On Max50 mΩ
Drain to Source Voltage (Vdss)30 V
Turn-On Delay Time20 ns
Turn-Off Delay Time11 ns
Element ConfigurationSingle
Fall Time65 ns
Rise Time65 ns
Gate Charge6.35 nC
Drain to Source Resistance50 mΩ
Gate to Source Voltage (Vgs)20 V
Drain to Source Breakdown Voltage (Vds)30 V
Schedule B8541290080
Gate to Source Threshold Voltage1 V
FET Type(Transistor Polarity)N-Channel

Stock: 9858

Distributors
pcbx
Unit Price$0.59417
Ext.Price$0.59417
QtyUnit PriceExt.Price
1$0.59417$0.59417
10$0.36933$3.69330
50$0.29840$14.92000
100$0.24109$24.10900
500$0.18552$92.76000
1000$0.16757$167.57000
3000$0.14534$436.02000
5000$0.13047$652.35000
10000$0.11713$1171.30000