SI2316DS-T1-E3
Manufacturer:
Vishay
Mfr.Part #:
SI2316DS-T1-E3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 700 mW 30 V Continuous Drain Current (ID):2.9 A 4.3 nC
| Parameter | Value |
|---|---|
| Length | 3.04 mm |
| Width | 1.4 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 50 mΩ |
| Height | 1.02 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Voltage | 30 V |
| REACH SVHC | Unknown |
| Number of Elements | 1 |
| Current | 2 A |
| Max Power Dissipation | 700 mW |
| Power Dissipation | 700 mW |
| Number of Channels | 1 |
| Input capacitance | 215 pF |
| Continuous Drain Current (ID) | 2.9 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 14 ns |
| Element Configuration | Single |
| Fall Time | 9 ns |
| Rise Time | 9 ns |
| Gate Charge | 4.3 nC |
| Drain to Source Resistance | 50 mΩ |
| Nominal Vgs | 800 mV |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 800 mV |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1853
Distributors
pcbx
pcbxUnit Price$1.11996
Ext.Price$1.11996
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.11996 | $1.11996 |
| 10 | $0.71301 | $7.13010 |
| 25 | $0.62399 | $15.59975 |
| 50 | $0.54608 | $27.30400 |
| 100 | $0.47790 | $47.79000 |
| 300 | $0.42496 | $127.48800 |
| 500 | $0.37788 | $188.94000 |
| 1000 | $0.34539 | $345.39000 |
| 3000 | $0.30436 | $913.08000 |
| 5000 | $0.28127 | $1406.35000 |