SI2319CDS-T1-GE3
Manufacturer:
VBsemi
Mfr.Part #:
SI2319CDS-T1-GE3
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 2.5 W 40 V Continuous Drain Current (ID):4.4 A 7 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 2.5 W |
| Number of Channels | 1 |
| Input capacitance | 595 pF |
| Continuous Drain Current (ID) | 4.4 A |
| Gate Charge | 7 nC |
| Drain to Source Resistance | 77 mΩ |
| Gate to Source Voltage (Vgs) | 10 V |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Gate to Source Threshold Voltage | -2.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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